Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)
- Department of Physics, National Institute of Technology, Kurukshetra 136119 (India)
- CSIR - National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi - 110 012 (India)
- Solid State Physical Laboratory, Timarpur, Delhi 110054 (India)
Wet chemical passivation of n-GaN surface using Ru based solution has been reported. X-ray photoelectron spectroscopy characterization of the GaN surface revealed removal of surface oxides by the introduction of Ru complex species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated GaN and a remarkable improvement in Schottky barrier height from 0.76 eV to 0.92 eV was observed.
- OSTI ID:
- 22261545
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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