Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V Devices

Conference · Thu Jun 08 00:00:00 EDT 2023

OSTI ID:1984979

Braun, Anna K. ; Boyer, Jacob T. ; McMahon, William E.; Schulte, Kevin L. ; Simon, John ; Packard, Corinne E.; Ptak, Aaron J.

In this work, we apply the morphology control of hydride vapor phase epitaxial (HVPE) growth to planarize faceted, non-planar substrates. Controlled spalling is a promising high-throughput substrate reuse technology that could reduce substrate costs for III-V devices; however, the spalling fracture for (100)-oriented GaAs substrates produces a regularly corrugated surface of facets that are 5-20 um in height. We discuss how to planarize these surfaces using only a few minutes of HVPE growth and how to minimize the impact on throughput when integrating faceted wafers into a potential manufacturing process at scale.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1984979
• Report Number(s): NREL/PR-5900-85452; MainId:86225; UUID:b88cd753-f2a4-415d-8c1a-dfe5fc1f43b9; MainAdminID:69726
• Resource Relation: Conference: Presented at the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), 15-18 May 2023, Orlando, Florida
• Country of Publication: United States
• Language: English

Related Subjects

SOLAR ENERGY
epitaxy
high throughput
HVPE
hydride vapor phase epitaxy
low cost
photovoltaic
PV
spalling