Ultra‐Low‐Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries
- Department of Electrical Engineering Columbia University New York NY 10027 USA, John Hopcroft Center for Computer Science School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai 200240 China
- Department of Applied Physics and Applied Mathematics Columbia University New York NY 10027 USA
- Department of Electrical Engineering Columbia University New York NY 10027 USA
Abstract
The fabrication processes of silicon nitride (Si 3 N 4 ) photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, it is shown that propagation loss as low as 0.42 dB cm −1 can be achieved using foundry compatible processes by solely reducing waveguide surface roughness. By postprocessing the fabricated devices using rapid thermal anneal (RTA) and furnace anneal, propagation losses down to 0.28 dB cm −1 and 0.06 dB cm −1 , respectively, are achieved. These low losses are comparable to the conventional devices using high temperature, high‐stress LPCVD films. The dispersion of the devices is also tuned, and it is proved that these devices can be used for linear and nonlinear applications. Low threshold parametric oscillation, broadband frequency combs, and narrow‐linewidth laser are demonstrated. This work demonstrates the feasibility of scalable photonic systems based on foundries.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- NONE; AR0000843
- OSTI ID:
- 1961502
- Journal Information:
- Laser & Photonics Reviews, Journal Name: Laser & Photonics Reviews Journal Issue: 3 Vol. 17; ISSN 1863-8880
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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