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Ultra‐Low‐Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

Journal Article · · Laser & Photonics Reviews
 [1];  [2];  [3];  [3];  [3];  [2];  [3]
  1. Department of Electrical Engineering Columbia University New York NY 10027 USA, John Hopcroft Center for Computer Science School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai 200240 China
  2. Department of Applied Physics and Applied Mathematics Columbia University New York NY 10027 USA
  3. Department of Electrical Engineering Columbia University New York NY 10027 USA

Abstract

The fabrication processes of silicon nitride (Si 3 N 4 ) photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, it is shown that propagation loss as low as 0.42 dB cm −1 can be achieved using foundry compatible processes by solely reducing waveguide surface roughness. By postprocessing the fabricated devices using rapid thermal anneal (RTA) and furnace anneal, propagation losses down to 0.28 dB cm −1 and 0.06 dB cm −1 , respectively, are achieved. These low losses are comparable to the conventional devices using high temperature, high‐stress LPCVD films. The dispersion of the devices is also tuned, and it is proved that these devices can be used for linear and nonlinear applications. Low threshold parametric oscillation, broadband frequency combs, and narrow‐linewidth laser are demonstrated. This work demonstrates the feasibility of scalable photonic systems based on foundries.

Sponsoring Organization:
USDOE
Grant/Contract Number:
NONE; AR0000843
OSTI ID:
1961502
Journal Information:
Laser & Photonics Reviews, Journal Name: Laser & Photonics Reviews Journal Issue: 3 Vol. 17; ISSN 1863-8880
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

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