Ultralow 0.034 dB/m loss wafer-scale integrated photonics realizing 720 million Q and 380 μW threshold Brillouin lasing
We demonstrate 0.034 dB/m loss waveguides in a 200-mm wafer-scale, silicon nitride (Si 3 N 4 ) CMOS-foundry-compatible integration platform. We fabricate resonators that measure up to a 720 million intrinsic Q resonator at 1615 nm wavelength with a 258 kHz intrinsic linewidth. This resonator is used to realize a Brillouin laser with an energy-efficient 380 µW threshold power. The performance is achieved by reducing scattering losses through a combination of single-mode TM waveguide design and an etched blanket-layer low-pressure chemical vapor deposition (LPCVD) 80 nm Si 3 N 4 waveguide core combined with thermal oxide lower and tetraethoxysilane plasma-enhanced chemical vapor deposition (TEOS–PECVD) upper oxide cladding. This level of performance will enable photon preservation and energy-efficient generation of the spectrally pure light needed for photonic integration of a wide range of future precision scientific applications, including quantum, precision metrology, and optical atomic clocks.
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Grant/Contract Number:
- AR0001042
- OSTI ID:
- 1860420
- Journal Information:
- Optics Letters, Journal Name: Optics Letters Journal Issue: 7 Vol. 47; ISSN OPLEDP; ISSN 0146-9592
- Publisher:
- Optical Society of AmericaCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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