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MOCVD growth of GaAsP on Si for tandem solar cell application

Conference ·
OSTI ID:191148
; ; ; ;  [1]
  1. Nagoya Inst. of Tech. (Japan)
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In this paper, the crystal growth of GaAsP on Si substrate for solar cell application and the characteristics of GaAsP/Si monolithic tandem solar cell are described. The conversion efficiency is improved by using TCA and graded buffer layer. TEM micrographs show that the dislocation density is drastically decreased with using TCA. The conversion efficiency of GaAsP solar cell on Si with GaAs buffer layer is higher than that with GaP buffer layer. The improvement in the efficiency is obtained by reducing the dislocation density in the GaAsP layer.
OSTI ID:
191148
Report Number(s):
CONF-941203--; ISBN 0-7803-1459-X
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
DISLOCATIONS
EFFICIENCY
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
FILL FACTORS
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDE SOLAR CELLS
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
MAGNESIUM FLUORIDES
MICROSTRUCTURE
PERFORMANCE
SILICON
SILICON SOLAR CELLS
TRANSMISSION ELECTRON MICROSCOPY
WINDOWS
ZINC SULFIDES