High efficiency monolithic GaAs/Si tandem solar cells grown by MOCVD

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:191138

Yang, Mingju; Soga, Tetsuo; Jimbo, Takashi; Umeno, Masayoshi ^[1]

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1. Nagoya Inst. of Tech. (Japan)

A monolithic high-efficiency GaAs/Si cascade solar cell fabricated by MOCVD is demonstrated. It consists of the GaAs top cell and the Si bottom cell. Using a buffer layer of Al{sub 0.3}Ga{sub 0.7}As, the conversion efficiency of the GaAs top cell is described from 15.1% from 14.2%, but it makes the efficiency of the Si bottom cell increased from 4.3% to 5.3%. The theoretical analyses of the Si bottom cell are carried out. The suitable resistivity of p-Si substrate for the Si bottom cell is founded to be 10 {Omega}{center_dot}cm, which corresponded with the experimental results. The total conversion efficiency of the GaAs/Si tandem solar cell is 19.5% (1 sun, AM0) which has been achieved in a three-terminal configuration.

• OSTI ID: 191138
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ANTIMONY
ANTIREFLECTION COATINGS
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
ELECTRIC POTENTIAL
EXPERIMENTAL DATA
FILL FACTORS
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GOLD
MAGNESIUM FLUORIDES
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
QUANTUM EFFICIENCY
SILICON
SILICON SOLAR CELLS
ZINC
ZINC SULFIDES