High efficiency AlGaAs/Si tandem solar cell over 20%

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:191100

Umeno, Masayoshi; Kato, Toshimich; Yang, Mingju; Azuma, Yutaka; Soga, Tetsuo; Jimbo, Takashi ^[1]

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1. Nagoya Inst. of Tech. (Japan)

A high-efficiency AlGaAs/Si tandem solar cell is fabricated by metal-organic chemical vapor deposition (MOCVD). It consists of a Al{sub 0.15}Ga{sub 0.85}As top cell and a Si bottom cell. The crystalline quality of the Al{sub 0.15}Ga{sub 0.85}As heteroepitaxial layer grown on Si is improved using a high-temperature growth process (800 C) and thermal cycle annealing (300--900 C). The quantum efficiency of the Si bottom cell in the long wavelength region is improved by back surface field. The conversion efficiencies of the tandem solar cell under AMO and 1sun measurement conditions with 4-terminal and 2-terminal configuration are 20.0% and 19.0%, respectively. The conversion efficiencies of the tandem solar cell with graded-band-gap emitter Al{sub x}Ga{sub 1{minus}x}As layer achieved 20.6% and 19.9% under same condition with 4-terminal and 2-terminal configuration, respectively.

• OSTI ID: 191100
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDE SOLAR CELLS
ANNEALING
ANTIMONY ALLOYS
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
DISLOCATIONS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
EXPERIMENTAL DATA
FABRICATION
FILL FACTORS
GALLIUM ARSENIDE SOLAR CELLS
GOLD
GOLD ALLOYS
MAGNESIUM FLUORIDES
PERFORMANCE
QUANTUM EFFICIENCY
SILICON SOLAR CELLS
ZINC ALLOYS
ZINC SULFIDES