Development of low thermal budget Si epitaxy and high-k/ metal gate stack for atomically precise electronic devices.
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0003525
- OSTI ID:
- 1894018
- Report Number(s):
- SAND2021-13295C; 701115
- Resource Relation:
- Conference: Proposed for presentation at the AVS 67 Virtual Symposium held October 25-28, 2021 in ,
- Country of Publication:
- United States
- Language:
- English
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