Development of a high-k gate stack for atomic-precision advanced manufacturing.
Conference
·
OSTI ID:1768736
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1768736
- Report Number(s):
- SAND2020-2567C; 684384
- Resource Relation:
- Conference: Proposed for presentation at the APS March Meeting 2020 held March 2-6, 2020 in Denver, CO, United States.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Development of low thermal budget Si epitaxy and high-k/ metal gate stack for atomically precise electronic devices.
Atomically Precise Advanced Manufacturing (APAM) Robustness: How reliable are APAM devices under high currents and temperatures?.
Low Thermal Budget Gate Stack for Atomic Precision Devices.
Conference
·
2021
·
OSTI ID:1894018
+11 more
Atomically Precise Advanced Manufacturing (APAM) Robustness: How reliable are APAM devices under high currents and temperatures?.
Conference
·
2019
·
OSTI ID:1700544
Low Thermal Budget Gate Stack for Atomic Precision Devices.
Conference
·
2019
·
OSTI ID:1700542
+4 more