Stabilization of ferroelectric phase of Hf0.6Zr0.4O2 on NbN and Nb [slides]
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Univ. of Virginia, Charlottesville, VA (United States)
- Radiant Technologies Inc., Albuquerque, NM (United States)
This work demonstrated both NbN and Nb make good electrodes for stabilizing orthorhombic phase of Hf0.6Zr0.4O2 ferroelectric films. Wake up are < 100 cycles. Pr can be as high as 30 µC/cm2 - respectively 14 and 18 µC/cm2 here. Further, capacitance suggests an orthorhombic phase can be stabilized. Addition of a linear dielectric under modest thickness can tune the Pr and reduce leakage.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Energy Frontier Research Centers (EFRC) (United States). Center for 3D Ferroelectric Microelectronics (3DFeM)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0003525; SC0021118
- OSTI ID:
- 1892451
- Report Number(s):
- SAND2021-12954C; 701006
- Country of Publication:
- United States
- Language:
- English
Similar Records
Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4 K
Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1-xO2 thin films
Journal Article
·
Mon Mar 04 23:00:00 EST 2019
· Applied Physics Letters
·
OSTI ID:1498486
Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Journal Article
·
Fri Mar 26 00:00:00 EDT 2021
· APL Materials
·
OSTI ID:1776535
Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1-xO2 thin films
Journal Article
·
Wed Oct 18 00:00:00 EDT 2023
· Solid-State Electronics
·
OSTI ID:2280503