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Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1-xO2 thin films

Journal Article · · Solid-State Electronics
 [1];  [2];  [2];  [2];  [3];  [4];  [4];  [5]
  1. University of Tokyo, Chiba (Japan); National Institute for Materials Science (NIMS), Tsukuba (Japan)
  2. National Institute for Materials Science (NIMS), Tsukuba (Japan)
  3. University of Texas at Dallas, Richardson, TX (United States)
  4. Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
  5. University of Tokyo, Chiba (Japan)
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TiN/HfxZr1-xO2 (HZO)/TiN capacitors were prepared using two types of HZO films fabricated by atomic layer deposition using H2O or O2 plasma as an oxidant gas, and post-deposition annealing at 400 °C was performed before the TiN top-electrode fabrication. The ferroelectric orthorhombic phase was dominantly formed for the O2 plasma-based capacitor due to the strongly oxidizing source of O2 plasma, resulted in higher remanent polarization (2Pr = 20 µC/cm2) than that (13 µC/cm2) of the H2O-based capacitor. The fatigue properties for the O2 plasma-based capacitor were improved by 14 % after 106 cycles compared to the H2O-based capacitor. This could be attributed to an oxygen-rich interface reaction layer (IRL) including TiOx between the HZO film and TiN bottom-electrode for the O2 plasma-based capacitor. In conclusion, based on these results, superior 2Pr and fatigue properties can be obtained using O2 plasma-based HZO films.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States); National Institute for Materials Science (NIMS), Tsukuba (Japan)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); Japan Society for the Promotion of Science (JSPS); Ministry of Education, Culture, Sports, Science and Technology (MEXT)
Grant/Contract Number:
SC0012704
OSTI ID:
2280503
Report Number(s):
BNL--225139-2023-JAAM
Journal Information:
Solid-State Electronics, Journal Name: Solid-State Electronics Vol. 210; ISSN 0038-1101
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (11)

Physical Mechanisms behind the Field-Cycling Behavior of HfO 2 -Based Ferroelectric Capacitors journal May 2016
Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications journal February 2021
Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source journal May 2018
Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films journal March 2019
Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition journal July 2019
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory journal November 2022
Improvement in ferroelectricity of Hf x Zr 1−x O 2 thin films using top- and bottom-ZrO 2 nucleation layers journal June 2019
Physical chemistry of the TiN/Hf 0.5 Zr 0.5 O 2 interface journal February 2020
Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis journal March 2021
Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C) journal May 2022
Many routes to ferroelectric HfO2: A review of current deposition methods journal January 2022

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36 MATERIALS SCIENCE
Atomic layer deposition (ALD)
Endurance property
Ferroelectric HfxZr1−xO2 thin film
Hard X-ray photoelectron spectroscopy (HAXPES)
Interface reaction layer
Metal–ferroelectric–metal (MFM) capacitor