Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4 K

Henry, M. D.; Smith, S. W.; Lewis, R. M.; Ihlefeld, J. F.

doi:10.1063/1.5052435

Stabilization of ferroelectric phase of Hf_0.58Zr_0.42O₂ on NbN at 4 K

Journal Article · Mon Mar 04 23:00:00 EST 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5052435· OSTI ID:1498486

Henry, M. D. ^[1]; Smith, S. W. ^[1]; Lewis, R. M. ^[1]; ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Virginia, Charlottesville, VA (United States)

Ferroelectricity in doped and alloyed hafnia thin films has been demonstrated using several different electrodes, with TiN and TaN being most prominent. Here, in this work, we demonstrate ferroelectric Hf_0.58Zr_0.42O₂ thin films with superconducting NbN electrodes at cryogenic temperatures. Demonstration of polarization—electric field [P(E)] response at liquid helium cryogenic temperatures, 4 K, suggests that the polarization is switchable over a wide temperature range after an initial 600 °C anneal. Further, room temperature P(E) and capacitance measurements demonstrate an expected polarization response with wake-up required to reach the steady state. Wake-up cycling at 4 K is observed to have no effect upon the ferroelectric phase suggesting an oxygen vacancy mobility freeze out whereas wake-up cycling at 294 K demonstrates close to a 3× increase in remanent polarization. In conclusion, this integration of a ferroelectric Hf_0.58Zr_0.42O₂ thin film with NbN demonstrates the suitability of a highly scalable ferroelectric in applications for cryogenic technologies.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1498486

Report Number(s):: SAND--2018-12166J; 669072

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 114; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Spontaneous polarization enhancement in ferroelectric Hf _0.5 Zr _0.5 O ₂ using atomic oxygen defects engineering: An ab initio study Wei, Wei; Ma, Xiaolei; Wu, Jixuan Applied Physics Letters, Vol. 115, Issue 9 https://doi.org/10.1063/1.5115293	journal	August 2019

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