Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0015547· OSTI ID:1760016
 [1];  [2];  [2];  [3];  [4]
  1. Univ. of Illinois, Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States); Lab. for Oxide Research and Education, Chicago, IL (United States)
  2. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain)
  3. Argonne National Lab. (ANL), Lemont, IL (United States)
  4. Univ. of Illinois, Chicago, IL (United States); Lab. for Oxide Research and Education, Chicago, IL (United States)
+ Show Author Affiliations
In this paper, we report a cryogenic-temperature study on the evolution of the ferroelectric properties of epitaxial Hf0.5Zr0.5O2 thin films on silicon. Wake-up, endurance, and fatigue of these films are found to be intricately correlated, strongly hysteretic, and dependent on available thermal energy. Field-dependent measurements reveal a decrease in polarization with temperature, which has been determined not to be an intrinsic change of the material property, rather a demonstration of the increase in the coercive bias of the material. Our findings suggest that a deficiency in thermal energy suppresses the mobility of defects presumed to be oxygen vacancies during wake-up and trapped injected charge during fatigue, which is responsible for polarization evolution during cycling. This permits accelerated wake-up and fatigue effects at high temperatures where thermal energy is abundant but delays these effects at cryogenic temperatures.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)
Sponsoring Organization:
European Regional Development Fund (FEDER); Generalitat de Catalunya; Ministry of Science and Innovation; National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1760016
Alternate ID(s):
OSTI ID: 1670235
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 117; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (35)

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films journal March 2012
Physical Mechanisms behind the Field-Cycling Behavior of HfO 2 -Based Ferroelectric Capacitors journal May 2016
Giant Negative Electrocaloric Effects of Hf 0.5 Zr 0.5 O 2 Thin Films journal July 2016
Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO 2 Thin Films journal July 2016
Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO 2 journal March 2018
Rhombohedral LSMO films - a unique case of ferroelastic domain formation journal March 2005
Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films journal October 2015
Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors journal November 2015
Wake-Up in a Hf 0.5 Zr 0.5 O 2 Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching journal February 2019
Effect of Zr Content on the Wake-Up Effect in Hf 1– x Zr x O 2 Films journal June 2016
Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide journal October 2014
Ferroelectricity in Simple Binary ZrO 2 and HfO 2 journal July 2012
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film journal September 2016
Modifying the barriers for oxygen-vacancy migration in fluorite-structured CeO 2 electrolytes through strain: a computer simulation study journal January 2012
Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition journal January 2017
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants journal January 2017
High polarization, endurance and retention in sub-5 nm Hf 0.5 Zr 0.5 O 2 films journal January 2020
Ferroelectric fatigue in perovskite oxides journal September 1995
Ferroelectricity in hafnium oxide thin films journal September 2011
Ferroelectric Zr 0.5 Hf 0.5 O 2 thin films for nonvolatile memory applications journal September 2011
Controlled oxygen vacancy induced p -type conductivity in HfO 2− x thin films journal September 2011
Improved ionic conductivity in strained yttria-stabilized zirconia thin films journal April 2013
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films journal November 2013
Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide journal January 2016
Enhanced ferroelectricity in epitaxial Hf 0.5 Zr 0.5 O 2 thin films integrated with Si(001) using SrTiO 3 templates journal June 2019
Theory of ferroelectrics journal April 1954
Model of ferroelectric fatigue due to defect/domain interactions journal December 1993
Temperature dependent fatigue rates in thin-film ferroelectric capacitors journal January 1994
High-temperature heat capacity and thermal expansion of SrTiO 3 and SrZrO 3 perovskites journal February 1996
Magnetism in hafnium dioxide journal July 2005
Thermally activated switching kinetics in second-order phase transition ferroelectrics journal July 2010
Thermal Expansion of HfO 2 and ZrO 2 : Thermal Expansion journal May 2014
Ferroelectric HfO 2 -based materials for next-generation ferroelectric memories journal June 2016
Ferroelectricity in Gd-Doped HfO 2 Thin Films journal January 2012
Stable ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films within a broad working temperature range journal August 2019

Similar Records

Related Subjects

36 MATERIALS SCIENCE
Cryogenics
Epitaxy
Ferroelectric materials
Phase transitions
Thin films