Silicon electronics on silk as a path to bioresorbable, implantable devices

Kim, Dae-Hyeong; Kim, Yun-Soung; Amsden, Jason; Panilaitis, Bruce; Kaplan, David L.; Omenetto, Fiorenzo G.; Zakin, Mitchell R.; Rogers, John A.

doi:10.1063/1.3238552

Silicon electronics on silk as a path to bioresorbable, implantable devices

Journal Article · Mon Sep 28 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3238552· OSTI ID:1876186

Kim, Dae-Hyeong ^[1]; Kim, Yun-Soung ^[2]; Amsden, Jason ^[3]; Panilaitis, Bruce ^[3]; Kaplan, David L. ^[3]; Omenetto, Fiorenzo G. ^[3]; Zakin, Mitchell R. ^[4]; Rogers, John A. ^[2]

Univ. of Illinois at Urbana-Champaign, IL (United States); University of Illinois
Univ. of Illinois at Urbana-Champaign, IL (United States)
Tufts Univ., Medford, MA (United States)
Defense Advanced Research Projects Agency, Arlington, VA (United States)

Many existing and envisioned classes of implantable biomedical devices require high performance electronics/sensors. An approach that avoids some of the longer term challenges in biocompatibility involves a construction in which some parts or all of the system resorbs in the body over time. Furthermore, this paper describes strategies for integrating single crystalline silicon electronics, where the silicon is in the form of nanomembranes, onto water soluble and biocompatible silk substrates. Electrical, bending, water dissolution, and animal toxicity studies suggest that this approach might provide many opportunities for future biomedical devices and clinical applications.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; U.S. Army Research Laboratory; U.S. Army Research Office

Grant/Contract Number:: FG02-07ER46471; FG02-07ER46453

OSTI ID:: 1876186

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 95; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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