Optimized Structural Designs for Stretchable Silicon Integrated Circuits

Kim, Dae-Hyeong; Liu, Zhuangjian; Kim, Yun-Soung; Wu, Jian; Song, Jizhou; Kim, Hoon-Sik; Huang, Yonggang; Hwang, Keh-chih; Zhang, Yongwei; Rogers, John A.

doi:10.1002/smll.200900853

Optimized Structural Designs for Stretchable Silicon Integrated Circuits

Journal Article · Mon Dec 14 00:00:00 EST 2009 · Small

DOI:https://doi.org/10.1002/smll.200900853· OSTI ID:1875846

Kim, Dae-Hyeong ^[1]; Liu, Zhuangjian ^[2]; Kim, Yun-Soung ^[3]; Wu, Jian ^[4]; Song, Jizhou ^[5]; Kim, Hoon-Sik ^[3]; Huang, Yonggang ^[4]; Hwang, Keh-chih ^[6]; Zhang, Yongwei ^[7]; Rogers, John A. ^[3]

Univ. of Illinois at Urbana-Champaign, IL (United States); University of Illinois
Institute of High Performance Computing, Connexis (Singapore)
Univ. of Illinois at Urbana-Champaign, IL (United States)
Northwestern Univ., Evanston, IL (United States)
Univ. of Miami, Coral Gables, FL (United States)
Tsinghua Univ., Beijing (China)
Institute of High Performance Computing, Connexis (Singapore); National Univ. of Singapore (Singapore)

Here, materials and design strategies for stretchable silicon integrated circuits that use non-coplanar mesh layouts and elastomeric substrates are presented. Detailed experimental and theoretical studies reveal many of the key underlying aspects of these systems. The results shpw, as an example, optimized mechanics and materials for circuits that exhibit maximum principal strains less than 0.2% even for applied strains of up to ≈90%. Simple circuits, including complementary metal–oxide–semiconductor inverters and n-type metal–oxide–semiconductor differential amplifiers, validate these designs. The results suggest practical routes to high-performance electronics with linear elastic responses to large strain deformations, suitable for diverse applications that are not readily addressed with conventional wafer-based technologies.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46453; FG02-07ER46471

OSTI ID:: 1875846

Journal Information:: Small, Journal Name: Small Journal Issue: 24 Vol. 5; ISSN 1613-6810

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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