Charon User Manual: v. 2.2 (revision1)

Technical Report · Wed Jun 01 00:00:00 EDT 2022

DOI:https://doi.org/10.2172/1871374· OSTI ID:1871374

Musson, Lawrence ^[1]; Hennigan, Gary ^[1]; Gao, Xujiao ^[1]; Humphreys, Richard ^[1]; Negoita, Mihai ^[1]; Huang, Andy ^[1]

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1. Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

This manual gives usage information for the Charon semiconductor device simulator. Charon was developed to meet the modeling needs of Sandia National Laboratories and to improve on the capabilities of the commercial TCAD simulators; in particular, the additional capabilities are running very large simulations on parallel computers and modeling displacement damage and other radiation effects in significant detail. The parallel capabilities are based around the MPI interface which allows the code to be ported to a large number of parallel systems, including linux clusters and proprietary “big iron” systems found at the national laboratories and in large industrial settings.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: NA0003525
• OSTI ID: 1871374
• Report Number(s): SAND2022-7653; 707085
• Country of Publication: United States
• Language: English

Related Subjects

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75 CONDENSED MATTER PHYSICS
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