Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Charon User Manual (V.2.1) (Rev.01)

Technical Report ·
DOI:https://doi.org/10.2172/1763530· OSTI ID:1763530

This manual gives usage information for the Charon semiconductor device simulator. Charon was developed to meet the modeling needs of Sandia National Laboratories and to improve on the capabilities of the commercial TCAD simulators; in particular, the additional capabilities are running very large simulations on parallel computers and modeling displacement damage and other radiation effects in significant detail. The parallel capabilities are based around the MPI interface which allows the code to be ported to a large number of parallel systems, including linux clusters and proprietary "big iron" systems found at the national laboratories and in large industrial settings.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1763530
Report Number(s):
SAND--2020-5266; 686310
Country of Publication:
United States
Language:
English

Similar Records

Charon User Manual: v. 2.2 (revision1)
Technical Report · Wed Jun 01 00:00:00 EDT 2022 · OSTI ID:1871374

Xyce Parallel Electronic Simulator Users' Guide (V.7.1)
Technical Report · Fri May 01 00:00:00 EDT 2020 · OSTI ID:1763514

PETSc Users Manual (Rev. 3.11)
Technical Report · Thu Feb 28 23:00:00 EST 2019 · OSTI ID:1577437