Electronic reconstruction at the polar (111)-oriented oxide interface

Ryu, S.; Zhou, H.; Paudel, T. R.; Campbell, N.; Podkaminer, J.; Bark, C. W.; Hernandez, T.; Fong, D. D.; Zhang, Y.; Xie, L.; Pan, X. Q.; Tsymbal, E. Y.; Rzchowski, M. S.; Eom, C. B.

doi:10.1063/5.0067445

Title: Electronic reconstruction at the polar (111)-oriented oxide interface

Journal Article · Tue Mar 29 00:00:00 EDT 2022 · APL Materials

DOI:https://doi.org/10.1063/5.0067445· OSTI ID:1869172

^[1]; Zhou, H. ^[2];

^[3]; Campbell, N. ^[1]; Podkaminer, J. ^[1];

^[1]; Hernandez, T. ^[1];

^[2]; Zhang, Y. ^[4]; Xie, L. ^[4]; Pan, X. Q. ^[5]; Tsymbal, E. Y. ^[1]; Rzchowski, M. S. ^[3];

^[1]

Univ. of Wisconsin, Madison, WI (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Univ. of Nebraska, Lincoln, NE (United States)
Univ. of Michigan, Ann Arbor, MI (United States)
Univ. of Michigan, Ann Arbor, MI (United States); Univ. of California, Irvine, CA (United States)

Atomically flat (111) interfaces between insulating perovskite oxides provide a landscape for new electronic phenomena. For example, the graphene-like coordination between interfacial metallic ion layer pairs can lead to topologically protected states [Xiao et al., Nat. Commun. 2, 596 (2011) and A. Rüegg and G. A. Fiete, Phys. Rev. B 84, 201103 (2011)]. The metallic ion/metal oxide bilayers that comprise the unit cell of the perovskite (111) heterostructures require the interface to be polar, generating an intrinsic polar discontinuity [Chakhalian et al., Nat. Mater. 11, 92 (2012)]. Here, we investigate epitaxial heterostructures of (111)-oriented LaAlO₃/SrTiO₃ (LAO/STO). We find that during heterostructure growth, the LAO overlayer eliminates the structural reconstruction of the STO (111) surface with an electronic reconstruction, which determines the properties of the resulting two-dimensional conducting gas. This is confirmed by transport measurements, direct determination of the structure and atomic charge from coherent Bragg rod analysis, and theoretical calculations of electronic and structural characteristics. Interfacial behaviors of the kind discussed here may lead to new growth control parameters useful for electronic devices.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Gordon and Betty Moore Foundation; Vannevar Bush Faculty Fellowship; US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)

Grant/Contract Number:: AC02-06CH11357; FG02-06ER46327; GBMF9065; N00014-20-1-2844; FA9550-15-1-0334; DMR-1720415; DMR-0820521; OIA-2044049

OSTI ID:: 1869172

Journal Information:: APL Materials, Vol. 10, Issue 3; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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