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Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO{sub 3}/SrTiO{sub 3} interfaces

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4863800· OSTI ID:22278161
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  1. NUSNNI-Nanocore, National University of Singapore, 117411 Singapore (Singapore)

We report that in unannealed LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell, the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.

OSTI ID:
22278161
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English