A 4 kV/120 A SiC Solid-State DC Circuit Breaker Powered By a Load-Independent IPT System
Journal Article
·
· IEEE Transactions on Industry Applications
- Drexel Univ., Philadelphia, PA (United States)
- Univ. of Michigan, Ann Arbor, MI (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Temple Univ., Philadelphia, PA (United States)
This article introduces a 4 kV/120 A solid-state dc circuit breaker (DCCB) based on discrete SiC mosfets. The DCCB is designed in a five-layer tower structure. Each layer consists of a circular main conduction branch and an attached gate driver. There are two primary benefits of the proposed DCCB. First, it reduces conduction loss with multiple devices in parallel. Second, it achieves an ultrafast response speed with SiC mosfets. Moreover, the gate drivers of the DCCB are powered by a domino inductive power transfer (IPT) system. It achieves the load-independent constant-voltage output characteristics, which means the outputs are immune to load variations. Additionally, an IPT system prototype is implemented to test the power transfer performance. At 500-kHz frequency, the total output power reaches 15.73 W, which is sufficient to power on five gate drivers, with a peak transfer efficiency of 75.4%. The IPT system is tested to power a 4 kV/120 A DCCB prototype. It validates that the DCCB is effective to turn off 120 A current within 3.5 μs.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Grant/Contract Number:
- AC05-00OR22725; AR0001114
- OSTI ID:
- 1869069
- Journal Information:
- IEEE Transactions on Industry Applications, Journal Name: IEEE Transactions on Industry Applications Journal Issue: 1 Vol. 58; ISSN 0093-9994
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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