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Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

Journal Article · · IEEE Transactions on Power Electronics
 [1];  [2];  [1];  [1]
  1. Univ. of Tennessee, Knoxville, TN (United States). Electrical Engineering and Computer Science Dept.
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
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The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. Here, a double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 C and compared with previous 10-kV MOSFETs. A simple behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1430604
Journal Information:
IEEE Transactions on Power Electronics, Journal Name: IEEE Transactions on Power Electronics Journal Issue: 5 Vol. 33; ISSN 0885-8993
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

10-kV silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET)
42 ENGINEERING
junction temperature
switching performance