Short circuit characterization of 3rdgeneration 10 kV SiC MOSFET

Conference · Wed Feb 28 23:00:00 EST 2018

OSTI ID:1471853

Ji, Shiqi ^[1]; Laitinen, Marko ^[2]; Huang, Xingxuan ^[1]; Sun, Jingjing ^[1]; Giewont, Bill ^[2]; Tolbert, Leon ^[3]; Wang, Fei ^[3]

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1. University of Tennessee, Knoxville (UTK)
2. Danfoss Drives
3. ORNL

The short circuit performance of a 3 rd generation 10 kV/20 A SiC MOSFET with short channel is characterized in this paper. The platform consisting of a phase-leg configuration, which can test both hard switching fault (HSF) and fault under load (FUL) types of fault, is introduced in detail. A Si IGBT based solid state circuit breaker is developed for short circuit test. The short circuit protection having a response time of 1.5 μs is validated by the test platform. The short circuit characteristics for both the HSF and FUL types at 6 kV DC-link are presented and analyzed.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1471853
• Country of Publication: United States
• Language: English