Short circuit characterization of 3rdgeneration 10 kV SiC MOSFET

Conference · Thu Mar 01 00:00:00 EST 2018

OSTI ID:1471853

Ji, Shiqi ^[1]; Laitinen, Marko ^[2]; Huang, Xingxuan ^[3]; Sun, Jingjing ^[3]; Giewont, Bill ^[2]; Tolbert, Leon M.  ^[4]; Wang, Fei ^[4]

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1. The University of Tennessee, Knoxville
2. Danfoss Drives
3. The University of Tennessee Knoxville
4. ORNL

The short circuit performance of a 3 rd generation 10 kV/20 A SiC MOSFET with short channel is characterized in this paper. The platform consisting of a phase-leg configuration, which can test both hard switching fault (HSF) and fault under load (FUL) types of fault, is introduced in detail. A Si IGBT based solid state circuit breaker is developed for short circuit test. The short circuit protection having a response time of 1.5 μs is validated by the test platform. The short circuit characteristics for both the HSF and FUL types at 6 kV DC-link are presented and analyzed.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1471853
• Resource Relation: Conference: IEEE Applied Power Electronics Conference and Exposition - San Antonio, Texas, United States of America - 3/4/2018 5:00:00 AM-3/8/2018 5:00:00 AM
• Country of Publication: United States
• Language: English