Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Superlattice structure including two-dimensional material and device including the superlattice structure

Patent ·
OSTI ID:1860129
; ; ; ;
Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
Research Organization:
Samsung Electronics Co., Ltd., Gyeonggi (South Korea); Cornell Univ., Ithaca, NY (United States); Univ. of Chicago, IL (United States)
Sponsoring Organization:
USDOE; US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)
Assignee:
Samsung Electronics Co., Ltd. (Gyeonggi-do, KR); Center for Technology Licensing at Cornell University (Ithaca, NY); The University of Chicago (Chicago, IL)
Patent Number(s):
11,189,699
Application Number:
16/428,006
OSTI ID:
1860129
Country of Publication:
United States
Language:
English

References (7)

Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface journal July 2015
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions journal September 2014
Electronic Properties of MoS 2 –WS 2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy journal September 2015
Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain journal March 2018
Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls journal May 2015
Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices journal August 2017
Single-layer MoS2 transistors journal January 2011

Similar Records

Superlattice optical device
Patent · Tue Dec 31 23:00:00 EST 1985 · OSTI ID:866010
Superlattice optical device
Patent · · OSTI ID:5381159
Three dimensional vertically structured electronic devices
Patent · Mon Dec 16 23:00:00 EST 2024 · OSTI ID:2542925

Related Subjects