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Title: Superlattice optical device

Abstract

A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

Inventors:
 [1];  [1];  [1];  [1]
  1. (Albuquerque, NM)
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
OSTI Identifier:
866010
Patent Number(s):
US 4616241
Assignee:
United States of America as represented by United States (Washington, DC) SNL
DOE Contract Number:
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
superlattice; optical; device; semiconductor; direct; transitions; conduction; band; valence; wave; vector; formed; plurality; alternating; layers; materials; material; bandgap; indirect; conduction band; alternating layers; optical device; semiconductor optical; valence band; direct bandgap; /257/372/

Citation Formats

Biefeld, Robert M., Fritz, Ian J., Gourley, Paul L., and Osbourn, Gordon C.. Superlattice optical device. United States: N. p., 1986. Web.
Biefeld, Robert M., Fritz, Ian J., Gourley, Paul L., & Osbourn, Gordon C.. Superlattice optical device. United States.
Biefeld, Robert M., Fritz, Ian J., Gourley, Paul L., and Osbourn, Gordon C.. Wed . "Superlattice optical device". United States. doi:. https://www.osti.gov/servlets/purl/866010.
@article{osti_866010,
title = {Superlattice optical device},
author = {Biefeld, Robert M. and Fritz, Ian J. and Gourley, Paul L. and Osbourn, Gordon C.},
abstractNote = {A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1986},
month = {Wed Jan 01 00:00:00 EST 1986}
}

Patent:

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  • A semiconductor device is described which consists of a superlattice having direct transitions between conduction band and valence band states with the same wavevector. The superlattice consists of alternating layers of at least two different materials, at least the material having the smallest band gap having indirect transitions between conduction band and valence band states with unequal wavevectors. Each of the layers is grown along the direction in which indirect conduction minima lie.
  • A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.
  • An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.