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Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor

Journal Article · · Physical Review Applied
 [1];  [2];  [2];  [2];  [3];  [3];  [3];  [3];  [4];  [4];  [5];  [2];  [2]
  1. Tokyo Institute of Technology (Japan); OSTI
  2. Tokyo Institute of Technology (Japan)
  3. National Inst. of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan)
  4. National Inst. of Advanced Industrial Science and Technology (AIST), Ishikawa (Japan)
  5. Harvard Univ., Cambridge, MA (United States); Tokyo Institute of Technology (Japan)

Nitrogen-vacancy (N-V) centers in diamond work as a quantum electrometer. Using an ensemble state of N-V centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage is measured, while applying a transverse magnetic field. The response of the energy-level shift against the electric field is significantly enhanced compared with that against an axial magnetic field. Repeating the measurement of the transverse electric field for multiple N-V axes, our team obtains the components of the electric field generated in the device.

Research Organization:
Harvard University, Cambridge, MA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
SC0019300
OSTI ID:
1853034
Journal Information:
Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 4 Vol. 14; ISSN 2331-7019
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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