Engineering quantum-coherent defects: The role of substrate miscut in chemical vapor deposition diamond growth

Meynell, Simon A.; McLellan, Claire A.; Hughes, Lillian B.; Wang, Wenbo; Mates, Tom E.; Mukherjee, Kunal; Bleszynski Jayich, Ania C.

doi:10.1063/5.0029715

Engineering quantum-coherent defects: The role of substrate miscut in chemical vapor deposition diamond growth

Journal Article · Thu Nov 12 23:00:00 EST 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0029715· OSTI ID:1852955

Meynell, Simon A. ^[1]; McLellan, Claire A. ^[2]; Hughes, Lillian B. ^[3]; Wang, Wenbo ^[4]; ^[3]; Mukherjee, Kunal ^[3]; ^[4]

Univ. of California, Santa Barbara, CA (United States). Dept. of Physics; Univ. of California, Santa Barbara, CA (United States)
Stanford Univ., CA (United States). Dept. of Materials Science and Engineering
Univ. of California, Santa Barbara, CA (United States). Dept. of Physics. Materials Department
Univ. of California, Santa Barbara, CA (United States). Dept. of Physics

The engineering of defects in diamond, particularly nitrogen-vacancy (NV) centers, is important for many applications in quantum science. A materials science approach based on chemical vapor deposition (CVD) growth of diamond and in situ nitrogen doping is a promising path toward tuning and optimizing the desired properties of the embedded defects. Herein, with the coherence of the embedded defects in mind, we explore the effects of substrate miscut on the diamond growth rate, nitrogen density, and hillock defect density, and we report an optimal angle range for the purposes of engineering coherent ensembles of NV centers in diamond according to our growth parameters. We provide a model that quantitatively describes hillock nucleation in the step-flow regime of CVD growth, shedding insight on the physics of hillock formation. We also report significantly enhanced incorporation of nitrogen at hillock defects, opening the possibility for templating hillock-defect-localized NV center ensembles for quantum applications.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Natural Sciences and Engineering Research Council of Canada (NSERC)

Grant/Contract Number:: SC0019241

OSTI ID:: 1852955

Alternate ID(s):: OSTI ID: 1712813

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 117; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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