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Illumination-induced modulation of conductivity and Gunn oscillation properties in epitaxial GaAs

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/5.0041508· OSTI ID:1852122
 [1];  [2]
  1. Univ. of Michigan, Ann Arbor, MI (United States). Applied Physics Program; Univ. of Michigan, Ann Arbor, MI (United States)
  2. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
In this work, we illuminate a gallium arsenide (GaAs) Gunn device and study the light-induced changes of Gunn oscillation properties. We observe that illumination leads to the modulation of the Gunn threshold voltage, the Gunn oscillation magnitude, and the coherency of Gunn oscillation, with the nature of the modulation being closely related to the position of illumination on the device. These effects are attributed to the generation of optically excited carriers, which results in the modulation of conductivity and the electric field profile along the device. The finite element method is used to simulate the change of the field profile of the Gunn device caused by illumination. We also report an unexpected phenomenon of Gunn oscillation property manipulation with an optical chopper. In addition, wavelength-dependent, power-dependent, and pulsed illumination measurements are performed to help with further understanding the observations.
Research Organization:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
SC0016206
OSTI ID:
1852122
Alternate ID(s):
OSTI ID: 1768644
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 129; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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