Gunn threshold voltage characterization in GaAs devices with wedge-shaped tapering

Hsu, Hua-Wei; Dominguez, Michael J.; Sih, Vanessa

doi:10.1063/5.0016101

Gunn threshold voltage characterization in GaAs devices with wedge-shaped tapering

Journal Article · Wed Aug 19 00:00:00 EDT 2020 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0016101· OSTI ID:1657494

^[1]; Dominguez, Michael J. ^[2]; ^[2]

Univ. of Michigan, Ann Arbor, MI (United States); University of Michigan, Ann Arbor
Univ. of Michigan, Ann Arbor, MI (United States)

Here, we fabricate gallium arsenide-based devices with a wedge-shaped tapering region connected to a rectangular-shaped region and measure the threshold voltage required to trigger the Gunn effect. The threshold voltage reduction is attributed to the focusing of the electric field toward the narrower end of the device and is effective when the device has a steep enough tapering. We also model the electric field profile for the tapered devices using an intuitive graphical approach and the finite element method and provide estimates for the threshold voltages of tapered devices. Finally, we compare the estimates to the measured values and provide possible reasons for the discrepancies. We believe the capability of threshold voltage reduction with the wedge-shaped tapering design could be useful in device applications.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0016206

OSTI ID:: 1657494

Alternate ID(s):: OSTI ID: 1648171

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 128; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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