Measurement of optically-pumped electron spin polarization in n-GaAs at high external electric fields

Hsu, Hua-Wei; Sih, Vanessa

doi:10.1016/j.physb.2023.415088

Measurement of optically-pumped electron spin polarization in n-GaAs at high external electric fields

Journal Article · Wed Jun 28 00:00:00 EDT 2023 · Physica. B, Condensed Matter

DOI:https://doi.org/10.1016/j.physb.2023.415088· OSTI ID:2006637

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University of Michigan, Ann Arbor, MI (United States); University of Michigan, Ann Arbor
University of Michigan, Ann Arbor, MI (United States)

We use the technique of time-resolved Kerr rotation (TRKR) to measure the electron spin polarization generated by optical spin pumping in an n-type gallium arsenide (GaAs) epilayer when an external electric field is simultaneously applied on the sample. The drift of the electron spins under the influence of the external electric field is captured with spatial scans of the pump–probe separation. A significant decay in the magnitude of electron spin polarization with electric field is observed and is attributed to the increased inhomogeneous broadening caused by the field-induced drift and the hot electron effects. Here, we extend the electric field range to as high as the Gunn threshold field in the measurement and we do not observe a spin amplification effect due to the spin Gunn effect under our experimental scheme.

View Accepted Manuscript (DOE)

Research Organization:: University of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: SC0016206

OSTI ID:: 2006637

Alternate ID(s):: OSTI ID: 1988682

Journal Information:: Physica. B, Condensed Matter, Journal Name: Physica. B, Condensed Matter Vol. 666; ISSN 0921-4526

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Measurement of optically-pumped electron spin polarization in n-GaAs at high external electric fields

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