Measurement of optically-pumped electron spin polarization in n-GaAs at high external electric fields
- University of Michigan, Ann Arbor, MI (United States)
We use the technique of time-resolved Kerr rotation (TRKR) to measure the electron spin polarization generated by optical spin pumping in an n-type gallium arsenide (GaAs) epilayer when an external electric field is simultaneously applied on the sample. The drift of the electron spins under the influence of the external electric field is captured with spatial scans of the pump–probe separation. A significant decay in the magnitude of electron spin polarization with electric field is observed and is attributed to the increased inhomogeneous broadening caused by the field-induced drift and the hot electron effects. Here, we extend the electric field range to as high as the Gunn threshold field in the measurement and we do not observe a spin amplification effect due to the spin Gunn effect under our experimental scheme.
- Research Organization:
- Univ. of Michigan, Ann Arbor, MI (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0016206
- OSTI ID:
- 2006637
- Alternate ID(s):
- OSTI ID: 1988682
- Journal Information:
- Physica. B, Condensed Matter, Vol. 666; ISSN 0921-4526
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of modified periodic waveforms on current-induced spin polarization measurements
Gunn threshold voltage characterization in GaAs devices with wedge-shaped tapering