Progress in three-terminal heterojunction bipolar transistor solar cells

Antolín, Elisa; Zehender, Marius H.; Svatek, Simon A.; Steiner, Myles A.; Martínez, Mario; García, Iván; García‐Linares, Pablo; Warren, Emily L.; Tamboli, Adele C.; Martí, Antonio

doi:10.1002/pip.3536

Progress in three-terminal heterojunction bipolar transistor solar cells

Journal Article · Wed Jan 26 00:00:00 EST 2022 · Progress in Photovoltaics

DOI:https://doi.org/10.1002/pip.3536· OSTI ID:1845667

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Univ. Politecnica de Madrid (Spain). Instituto de Energía Solar
National Renewable Energy Laboratory (NREL) Golden CO USA

Conventional solar cells, including multijunction solar cells, are based on pn junctions as building blocks. In contrast, the three-terminal heterojunction bipolar transistor solar cell (3T-HBTSC) explores the use of a bipolar transistor structure to build a solar cell. The limiting efficiency of this transistor structure equals that of a double-junction solar cell. However, since the 3T-HBTSC does not require tunnel junctions, its minimal structure has only three semiconductor layers, while the minimal structure of a double junction solar cell has six. This work reviews the operation principles of this solar cell and the steps carried out towards its practical implementation. Experimental results on a GaInP/GaAs HBTSC prototype with bottom interdigitated contacts are presented.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1845667

Alternate ID(s):: OSTI ID: 1874986

Report Number(s):: NREL/JA-5K00-80433; MainId:42636; UUID:ee2aca43-f935-43a8-aeb8-6ed5160d1f69; MainAdminID:25728

Journal Information:: Progress in Photovoltaics, Journal Name: Progress in Photovoltaics Journal Issue: 8 Vol. 30; ISSN 1062-7995

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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III-V material
base transport factor
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