Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Conference · Thu Feb 06 04:00:00 EST 2020

DOI:https://doi.org/10.1109/PVSC40753.2019.8980563· OSTI ID:1605066

Zehender, Marius H. ^[1]; Garcia, Ivan ^[1]; Svatek, Simon ^[1]; Steiner, Myles A ^[2]; Linares, Pablo Garcia ^[1]; Warren, Emily L ^[2]; Tamboli, Adele C ^[2]; Marti, Antonio ^[1]; Antolin, Elisa ^[1]

---

1. Universidad Politecnica de Madrid
2. National Renewable Energy Laboratory (NREL), Golden, CO (United States)

The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1605066
• Report Number(s): NREL/CP-5900-73145
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
42 ENGINEERING
double junction
gallium arsenide
gallium indium phosphide
independent current
multi terminal
photovoltaic cells