Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Conference · Tue Jan 05 04:00:00 EST 2021

DOI:https://doi.org/10.1109/PVSC45281.2020.9301000· OSTI ID:1768314

Zehender, Marius H.; Svatek, Simon A; Steiner, Myles A.; Garcia, Ivan; Garcia Linares, Pablo; Warren, Emily L.; Marti, Antonio; Tamboli, Adele C.; Antolin, Elisa

Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enables contacting the intermediate layer from the bottom, which increases the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1768314
• Report Number(s): NREL/CP-5900-75957; MainId:6511; UUID:83274c51-fc41-ea11-9c2f-ac162d87dfe5; MainAdminID:19745
• Country of Publication: United States
• Language: English

Related Subjects

41 EE - Solar Energy Technologies Office (EE-4S)
double-junction
inverted
solar cell
thin-film
three-terminal