Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure

Hsu, Nai-Wen; Hou, Wei-Chih; Chen, Yen-Yang; Wu, Yu-Jui; Kao, Hsiang-Shun; Harris, Charles Thomas; Lu, Tzu-Ming; Li, Jiun-Yun

doi:10.1109/ted.2021.3138363

Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure

Journal Article · Sun Jan 09 23:00:00 EST 2022 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/ted.2021.3138363· OSTI ID:1842836

Hsu, Nai-Wen ^[1]; ^[1]; ^[1]; ^[1]; Kao, Hsiang-Shun ^[1]; ^[2]; Lu, Tzu-Ming ^[2]; ^[1]

National Taiwan Univ., Taipei (Taiwan)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Capacitance–voltage (C–V ) characteristics and carrier transport properties of 2-D electron gases (2DEGs) in an undoped Si/SiGe heterostructure at T = 4 – 35 K are presented here. In this work, two capacitance plateaus due to density saturation of the 2DEG in the buried Si quantum well (QW) are observed and explained by a model of surface tunneling. The peak mobility at 4 K is 4.1 × 10⁵ cm²/V·s and enhanced by a factor of 1.97 at an even lower carrier density compared to the saturated carrier density, which is attributed to the effect of remote carrier screening. At T = 35 K, the mobility enhancement with a factor of 1.35 is still observed, which suggests the surface tunneling is still dominant.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Taiwan Ministry of Science and Technology (MOST)

Grant/Contract Number:: NA0003525

OSTI ID:: 1842836

Report Number(s):: SAND--2022-0769J; 703059

Journal Information:: IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 2 Vol. 69; ISSN 0018-9383

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
C–V characteristics
surface tunneling
undoped Si/SiGe heterostructure

Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure

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