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Title: Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds

Patent ·
OSTI ID:1840408

Disclosed is a hermetic bond for a joint including a first layer of silicon carbide; a second layer of silicon carbide; and a bonding layer positioned between the first layer and the second layer, wherein the bonding layer includes an iridium layer, a first reaction zone positioned between the iridium foil layer and the first layer, and a second reaction zone positioned between the iridium foil layer and the second layer, wherein the first reaction zone and the second reaction zone include iridium silicides.

Research Organization:
US Dept. of Energy (USDOE), Washington, DC (United States)
Sponsoring Organization:
USDOE; US Office of Naval Research (ONR)
DOE Contract Number:
AC11-98PN38206; N00024-98-C-4064
Assignee:
U.S. Department of Energy (Washington, DC)
Patent Number(s):
11,110,681
Application Number:
16/454,240
OSTI ID:
1840408
Resource Relation:
Patent File Date: 06/27/2019
Country of Publication:
United States
Language:
English

References (6)

Method for assembling parts made of materials based on sic by non-reactive refractory brazing, brazing composition, and joint and assembly obtained by said method patent-application February 2003
SiC sintered body having metallized layer and production method thereof patent May 1987
System and Method for Producing Chemicals at High Temperature patent-application September 2015
Non-Contaminating Bonding Material for Segmented Silicon Carbide Liner in a Fluidized Bed Reactor patent-application February 2016
Method and components for bonding a silicon carbide molded part to another such part or to a metallic part patent October 1990
Recuperator tube assembly patent February 1987

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