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Title: Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds

Abstract

Disclosed is a hermetic bond for a joint including a first layer of silicon carbide; a second layer of silicon carbide; and a bonding layer positioned between the first layer and the second layer, wherein the bonding layer includes an iridium layer, a first reaction zone positioned between the iridium foil layer and the first layer, and a second reaction zone positioned between the iridium foil layer and the second layer, wherein the first reaction zone and the second reaction zone include iridium silicides.

Inventors:
Publication Date:
Research Org.:
US Dept. of Energy (USDOE), Washington, DC (United States)
Sponsoring Org.:
USDOE; US Office of Naval Research (ONR)
OSTI Identifier:
1840408
Patent Number(s):
11,110,681
Application Number:
16/454,240
Assignee:
U.S. Department of Energy (Washington, DC)
DOE Contract Number:  
AC11-98PN38206; N00024-98-C-4064
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/27/2019
Country of Publication:
United States
Language:
English

Citation Formats

Cockeram, Brian V. Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds. United States: N. p., 2021. Web.
Cockeram, Brian V. Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds. United States.
Cockeram, Brian V. 2021. "Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds". United States. https://www.osti.gov/servlets/purl/1840408.
@article{osti_1840408,
title = {Diffusion bonded silicon carbide having iridium and hermetic silicon carbide-iridium bonds},
author = {Cockeram, Brian V.},
abstractNote = {Disclosed is a hermetic bond for a joint including a first layer of silicon carbide; a second layer of silicon carbide; and a bonding layer positioned between the first layer and the second layer, wherein the bonding layer includes an iridium layer, a first reaction zone positioned between the iridium foil layer and the first layer, and a second reaction zone positioned between the iridium foil layer and the second layer, wherein the first reaction zone and the second reaction zone include iridium silicides.},
doi = {},
url = {https://www.osti.gov/biblio/1840408}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 07 00:00:00 EDT 2021},
month = {Tue Sep 07 00:00:00 EDT 2021}
}

Works referenced in this record:

System and Method for Producing Chemicals at High Temperature
patent-application, September 2015


Non-Contaminating Bonding Material for Segmented Silicon Carbide Liner in a Fluidized Bed Reactor
patent-application, February 2016


Recuperator tube assembly
patent, February 1987