Silicon carbide formation at the joint during infrared bonding of silicon carbide
- Univ. of Cincinnati, OH (United States). Dept. of Materials Science and Engineering
Joining of silicon carbide with infrared using a mixture of Si-30wt.%C as the brazing material has been investigated. Joining was performed at a temperature of 1,500 C in a flowing argon atmosphere for processing times ranging from 5 to 60 seconds. The joining filler materials include thin film silicon obtained by thinning down silicon wafers to about 70 {micro}m and graphite powder of a 15 {micro}m average particle size. Joint strengths were determined with a specially designed shear-in-compression jig for testing shear strengths of brittle materials. Cross section examinations of the joined specimens with optical microscopy, scanning electron microscopy and transmission electron microscopy have shown that all joints are essentially void free with excellent wetting between the base SiC and the brazing material. Silicon carbide in the {beta} form has been identified as the reaction product in the joining zone with a transmission electron microscopy (TEM) and selected area diffraction (SAD) analysis. At 1,500 C with a joining time of 60 seconds, the joint has consisted of primarily SiC. With such a high SiC content in the joint, the joint strength is comparable to those by other joining techniques, such as diffusion bonding, as reported in the literature. A kinetic model for the formation of SiC from liquid silicon and carbon is proposed to explain the observed joint microstructural evolution.
- OSTI ID:
- 367618
- Report Number(s):
- CONF-960202-; ISBN 0-87339-310-4; TRN: IM9640%%364
- Resource Relation:
- Conference: Annual meeting and exhibition of the Minerals, Metals and Materials Society (TMS), Anaheim, CA (United States), 4-8 Feb 1996; Other Information: PBD: 1996; Related Information: Is Part Of Design fundamentals of high temperature composites, intermetallics, and metal-ceramics systems; Lin, R.Y. [ed.] [Univ. of Cincinnati, OH (United States). Dept. of Materials Science and Engineering]; Chang, Y.A. [ed.] [Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering]; Reddy, R.G. [ed.] [Univ. of Nevada, Reno, NV (United States). Dept. of Chemical and Metallurgical Engineering]; Liu, C.T. [ed.] [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.]; PB: 461 p.
- Country of Publication:
- United States
- Language:
- English
Similar Records
SILICON CARBIDE JOINING. FINAL TOPICAL REPORT
Mechanical behavior of active brazed silicon-nitride joints