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Isotropic etchback method of linewidth tailoring multilayer dielectric diffraction gratings for improvement of laser damage resistance and diffraction efficiency

Patent ·
OSTI ID:1840316
; ;

A method of fabricating a multilayer dielectric (MLD) diffraction grating by providing a multilayer stack having a grating layer, and anisotropically etching the grating layer to form grating lines having an initial lineheight, an initial linewidth, and an initial grating duty cycle, that are greater than a target lineheight, a target linewidth, and a target grating duty cycle, respectively. An isotropic wet etch solution is then used to etch back the grating lines to the target lineheight, the target linewidth, and the target grating duty cycle so as to minimize electric field intensities and maximize diffraction efficiency for a given set of MLD illumination conditions.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
11,079,543
Application Number:
13/244,033
OSTI ID:
1840316
Country of Publication:
United States
Language:
English

References (3)

Multiscale, multifunction diffractive structures wet etched into fused silica for high-laser damage threshold applications journal October 1998
Low-efficiency gratings for third-harmonic diagnostics applications conference December 1995
Etch‐stop characteristics of Sc2O3 and HfO2 films for multilayer dielectric grating applications
  • Britten, J. A.; Nguyen, H. T.; Falabella, S. F.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 14, Issue 5 https://doi.org/10.1116/1.580256
journal September 1996

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