Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories

Buddhanoy, Matchima; Kumari, Preeti; Surendranathan, Umeshwarnath; Wasiolek, Maryla; Hattar, Khalid; Ray, Biswajit

doi:10.1109/tns.2021.3124484

Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories

Journal Article · Sat Nov 13 00:00:00 EST 2021 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2021.3124484· OSTI ID:1834106

Buddhanoy, Matchima ^[1]; Kumari, Preeti ^[1]; Surendranathan, Umeshwarnath ^[1]; Wasiolek, Maryla ^[2]; Hattar, Khalid ^[2]; Ray, Biswajit ^[1]

Univ. of Alabama, Huntsville, AL (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

This article evaluates the data retention characteristics of irradiated multi-level cell (MLC) 3-D NAND flash memories. We irradiate the memory chips by a Co-60 gamma-ray source for up to 50 krad(Si) and then write a random data pattern on the irradiated chip to find its retention characteristics. The experimental results show that the data retention property of the irradiated chips is significantly degraded compared to the un-irradiated ones. We evaluate two independent strategies to improve the data retention characteristics of the irradiated chips. Furthermore, the first method involves high-temperature annealing of the irradiated chip while the second method suggests pre-programming the memory modules before deploying them in radiation-prone environments.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Nuclear Energy (NE)

Grant/Contract Number:: NA0003525

OSTI ID:: 1834106

Report Number(s):: SAND--2021-13819J; 701926

Journal Information:: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3 Vol. 69; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (30)

The nature of the trapped hole annealing process Lelis, A. J.; Oldham, T. R.; Boesch, H. E. IEEE Transactions on Nuclear Science, Vol. 36, Issue 6 https://doi.org/10.1109/23.45373	journal	December 1989
Effects of interface traps and border traps on MOS postirradiation annealing response Fleetwood, D. M.; Warren, W. L.; Schwank, J. R. IEEE Transactions on Nuclear Science, Vol. 42, Issue 6 https://doi.org/10.1109/23.488768	journal	December 1995
Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides Ceschia, M.; Paccagnella, A.; Cester, A. IEEE Transactions on Nuclear Science, Vol. 45, Issue 6 https://doi.org/10.1109/23.736457	journal	December 1998
A model of radiation induced leakage current (RILC) in ultra-thin gate oxides Larcher, L.; Paccagnella, A.; Ceschia, M. IEEE Transactions on Nuclear Science, Vol. 46, Issue 6 https://doi.org/10.1109/23.819120	journal	December 1999
HeatWatch: Improving 3D NAND Flash Memory Device Reliability by Exploiting Self-Recovery and Temperature Awareness Luo, Yixin; Ghose, Saugata; Cai, Yu 2018 IEEE International Symposium on High Performance Computer Architecture (HPCA) https://doi.org/10.1109/HPCA.2018.00050	conference	February 2018
Flash correct-and-refresh: Retention-aware error management for increased flash memory lifetime Cai, Yu; Yalcin, Gulay; Mutlu, Onur 2012 IEEE 30th International Conference on Computer Design (ICCD) https://doi.org/10.1109/ICCD.2012.6378623	conference	September 2012
Random telegraph noise in flash memories - model and technology scaling Fukuda, Koichi; Shimizu, Yuui; Amemiya, Kazumi 2007 IEEE International Electron Devices Meeting https://doi.org/10.1109/IEDM.2007.4418893	conference	January 2007
A study on the short- and long-term effects of X-ray exposure on NAND Flash memories Gerardin, S.; Bagatin, M.; Paccagnella, A. 2011 International Reliability Physics Symposium https://doi.org/10.1109/IRPS.2011.5784572	conference	April 2011
Runtime Variability Monitor for Data Retention Characteristics of Commercial NAND Flash Memory Buddhanoy, Matchima; Sakib, Sadman; Ray, Biswajit 2021 IEEE International Reliability Physics Symposium (IRPS) https://doi.org/10.1109/IRPS46558.2021.9405143	conference	March 2021
Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives Cai, Yu; Ghose, Saugata; Haratsch, Erich F. Proceedings of the IEEE, Vol. 105, Issue 9 https://doi.org/10.1109/JPROC.2017.2713127	journal	September 2017
Annealing of Static data Errors in NAND-Flash memories Schmidt, H.; Walter, D.; Bruggemann, M. 2007 9th European Conference on Radiation and Its Effects on Components and Systems https://doi.org/10.1109/RADECS.2007.5205505	conference	September 2007
Activation Energies $(E_{a})$ of Failure Mechanisms in Advanced NAND Flash Cells for Different Generations and Cycling Lee, Kyunghwan; Kang, Myounggon; Seo, Seongjun IEEE Transactions on Electron Devices, Vol. 60, Issue 3 https://doi.org/10.1109/TED.2013.2241065	journal	March 2013
True Random Number Generation Using Read Noise of Flash Memory Cells Ray, Biswajit; Milenkovic, Aleksandar IEEE Transactions on Electron Devices, Vol. 65, Issue 3 https://doi.org/10.1109/TED.2018.2792436	journal	March 2018
Data retention after heavy ion exposure of floating gate memories: analysis and simulation Larcher, L.; Cellere, G.; Paccagnella, A. IEEE Transactions on Nuclear Science, Vol. 50, Issue 6 https://doi.org/10.1109/TNS.2003.821598	journal	December 2003
Transient conductive path induced by a Single ion in 10 nm SiO/sub 2/ Layers Cellere, G.; Paccagnella, A.; Visconti, A. IEEE Transactions on Nuclear Science, Vol. 51, Issue 6 https://doi.org/10.1109/TNS.2004.839146	journal	December 2004
Radiation induced leakage current in floating gate memory cells Cellere, G.; Larcher, L.; Paccagnella, A. IEEE Transactions on Nuclear Science, Vol. 52, Issue 6 https://doi.org/10.1109/TNS.2005.860725	journal	December 2005
Error Instability in Floating Gate Flash Memories Exposed to TID Bagatin, Marta; Gerardin, Simone; Cellere, Giorgio IEEE Transactions on Nuclear Science, Vol. 56, Issue 6 https://doi.org/10.1109/TNS.2009.2033364	journal	December 2009
Present and Future Non-Volatile Memories for Space Gerardin, Simone; Paccagnella, Alessandro IEEE Transactions on Nuclear Science https://doi.org/10.1109/TNS.2010.2084101	journal	December 2010
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro IEEE Transactions on Nuclear Science, Vol. 58, Issue 6 https://doi.org/10.1109/TNS.2011.2171505	journal	December 2011
Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory Oldham, T. R.; Chen, D.; Friendlich, M. IEEE Transactions on Nuclear Science, Vol. 58, Issue 6 https://doi.org/10.1109/TNS.2011.2172816	journal	December 2011
Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure Oldham, T. R.; Friendlich, M. R. IEEE Transactions on Nuclear Science, Vol. 59, Issue 6 https://doi.org/10.1109/TNS.2012.2221144	journal	December 2012
Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory Chen, Dakai; Wilcox, Edward; Ladbury, Raymond L. IEEE Transactions on Nuclear Science, Vol. 64, Issue 1 https://doi.org/10.1109/TNS.2016.2615719	journal	January 2017
Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories Bagatin, M.; Gerardin, S.; Paccagnella, A. IEEE Transactions on Nuclear Science, Vol. 65, Issue 1 https://doi.org/10.1109/TNS.2017.2777887	journal	January 2018
Total Ionizing Dose Effects in 3-D NAND Flash Memories Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro IEEE Transactions on Nuclear Science, Vol. 66, Issue 1 https://doi.org/10.1109/TNS.2018.2878911	journal	January 2019
Directional Dependence of Co-60 Irradiation on the Total Dose Response of Flash Memories Gadlage, Matthew J.; Bruce, David I.; Ingalls, James D. IEEE Transactions on Nuclear Science, Vol. 66, Issue 1 https://doi.org/10.1109/TNS.2018.2879685	journal	January 2019
Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation Kumari, Preeti; Huang, Sijay; Wasiolek, Maryla IEEE Transactions on Nuclear Science, Vol. 67, Issue 9 https://doi.org/10.1109/TNS.2020.3014261	journal	September 2020
Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory Kumari, Preeti; Surendranathan, Umeshwarnath; Wasiolek, Maryla IEEE Transactions on Nuclear Science, Vol. 68, Issue 5 https://doi.org/10.1109/TNS.2021.3052909	journal	May 2021
Gamma-Ray-Induced Error Pattern Analysis for MLC 3-D NAND Flash Memories Surendranathan, Umeshwarnath; Kumari, Preeti; Wasiolek, Maryla IEEE Transactions on Nuclear Science, Vol. 68, Issue 5 https://doi.org/10.1109/TNS.2021.3059186	journal	May 2021
A Survey of Software Techniques for Using Non-Volatile Memories for Storage and Main Memory Systems Mittal, Sparsh; Vetter, Jeffrey S. IEEE Transactions on Parallel and Distributed Systems, Vol. 27, Issue 5 https://doi.org/10.1109/TPDS.2015.2442980	journal	May 2016
VLSI Implementation of BCH Error Correction for Multilevel Cell NAND Flash Memory Choi, Hyojin; Liu, Wei; Sung, Wonyong IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 18, Issue 5 https://doi.org/10.1109/TVLSI.2009.2015666	journal	May 2010

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3-D NAND flash
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
Electron traps
Flash memory cells
Ionizing radiation
Memory reliability
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Nonvolatile memory
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Radiation effects
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Total-ionizing-dose

Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories

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