Sulfurization Engineering of One–Step Low–Temperature MoS2 and WS2 Thin Films for Memristor Device Applications

Gu, Yuqian; Serna, Martha I.; Mohan, Sivasakthya; Londoño‐Calderon, Alejandra; Ahmed, Taimur; Huang, Yifu; Lee, Jack; Walia, Sumeet; Pettes, Michael Thompson; Liechti, Kenneth M.; Akinwande, Deji

doi:10.1002/aelm.202100515

Sulfurization Engineering of One–Step Low–Temperature MoS₂ and WS₂ Thin Films for Memristor Device Applications

Journal Article · Thu Oct 07 00:00:00 EDT 2021 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.202100515· OSTI ID:1829652

^[1]; ^[1]; Mohan, Sivasakthya ^[1]; ^[2]; Ahmed, Taimur ^[3]; Huang, Yifu ^[1]; Lee, Jack ^[1]; Walia, Sumeet ^[3]; ^[2]; Liechti, Kenneth M. ^[1]; ^[1]

Univ. of Texas, Austin, TX (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Royal Melbourne Inst. of Technology (Australia)

2D materials have been of considerable interest as new materials for device applications. Non-volatile resistive switching applications of MoS₂ and WS₂ have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large-area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one-step sulfurization method to synthesize MoS₂ and WS₂ at 550 °C in 15 min on sapphire wafers. Furthermore, a large area transfer of the synthesized thin films to SiO₂/Si substrates is achieved. Following this, MoS₂ and WS₂ memristors are fabricated that exhibit stable non-volatile switching and a satisfactory large on/off current ratio (10³–10⁵) with good uniformity. Tuning the sulfurization parameters (temperature and metal precursor thickness) is found to be a straightforward and effective strategy to improve the performance of the memristors. Furthermore, the demonstration of large-scale MoS₂ and WS₂ memristors with a one-step low-temperature sulfurization method with simple strategy to tuning can lead to potential applications such as flexible memory and neuromorphic computing.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 1829652

Alternate ID(s):: OSTI ID: 1835367

Report Number(s):: LA-UR--21-24293

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 2 Vol. 8; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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