Observation of single-defect memristor in an MoS2 atomic sheet

Hus, Saban M.; Ge, Ruijing; Chen, Po-An; Liang, Liangbo; Donnelly, Gavin E.; Ko, Wonhee; Huang, Fumin; Chiang, Meng-Hsueh; Li, An-Ping; Akinwande, Deji

doi:10.1038/s41565-020-00789-w

Observation of single-defect memristor in an MoS2 atomic sheet

Journal Article · Mon Nov 09 04:00:00 EST 2020 · Nature Nanotechnology

DOI:https://doi.org/10.1038/s41565-020-00789-w· OSTI ID:1760111

Hus, Saban M. ^[1]; Ge, Ruijing ^[1]; Chen, Po-An ^[2]; Liang, Liangbo ^[3]; ^[4]; ^[3]; ^[4]; ^[2]; ^[3]; ^[1]

Univ. of Texas, Austin, TX (United States)
National Cheng Kung Univ., Tainan City (Taiwan)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Queen's Univ., Belfast, Northern Ireland (United Kingdom)

Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide and hexagonal boron nitride sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS₂ as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1760111

Journal Information:: Nature Nanotechnology, Journal Name: Nature Nanotechnology Journal Issue: 1 Vol. 16; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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