Observation of single-defect memristor in an MoS2 atomic sheet

Hus, Saban M.; Ge, Ruijing; Chen, Po-An; Liang, Liangbo; Donnelly, Gavin E.; Ko, Wonhee; Huang, Fumin; Chiang, Meng-Hsueh; Li, An-Ping; Akinwande, Deji

doi:10.1038/s41565-020-00789-w

Observation of single-defect memristor in an MoS2 atomic sheet

Journal Article · Mon Nov 09 00:00:00 EST 2020 · Nature Nanotechnology

DOI:https://doi.org/10.1038/s41565-020-00789-w· OSTI ID:1760111

Hus, Saban M. ^[1]; Ge, Ruijing ^[1]; Chen, Po-An ^[2]; Liang, Liangbo ^[3]; ^[4]; ^[3]; ^[4]; ^[2]; ^[3]; ^[1]

Univ. of Texas, Austin, TX (United States)
National Cheng Kung Univ., Tainan City (Taiwan)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Queen's Univ., Belfast, Northern Ireland (United Kingdom)

Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide and hexagonal boron nitride sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS₂ as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1760111

Journal Information:: Nature Nanotechnology, Journal Name: Nature Nanotechnology Journal Issue: 1 Vol. 16; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (36)

Atomic‐Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy Ko, Wonhee; Ma, Chuanxu; Nguyen, Giang D. Advanced Functional Materials, Vol. 29, Issue 52 https://doi.org/10.1002/adfm.201903770	journal	October 2019
Properties of Individual Dopant Atoms in Single-Layer MoS ₂ : Atomic Structure, Migration, and Enhanced Reactivity Lin, Yung-Chang; Dumcenco, Dumitru O.; Komsa, Hannu-Pekka Advanced Materials, Vol. 26, Issue 18 https://doi.org/10.1002/adma.201304985	journal	February 2014
Atomically Thin Femtojoule Memristive Device Zhao, Huan; Dong, Zhipeng; Tian, He Advanced Materials, Vol. 29, Issue 47 https://doi.org/10.1002/adma.201703232	journal	October 2017
Thinnest Nonvolatile Memory Based on Monolayer h‐BN Wu, Xiaohan; Ge, Ruijing; Chen, Po‐An Advanced Materials, Vol. 31, Issue 15 https://doi.org/10.1002/adma.201806790	journal	February 2019
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
Electronic properties and enhanced reactivity of MoS2 monolayers with substitutional gold atoms embedded into sulfur vacancies Miralrio, Alan; Rangel Cortes, Eduardo; Castro, Miguel Applied Surface Science, Vol. 455 https://doi.org/10.1016/j.apsusc.2018.05.220	journal	October 2018
Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides Ge, Ruijing; Wu, Xiaohan; Kim, Myungsoo Nano Letters, Vol. 18, Issue 1 https://doi.org/10.1021/acs.nanolett.7b04342	journal	December 2017
Scanning Tunneling Microscopy of an Air Sensitive Dichalcogenide Through an Encapsulating Layer Martinez-Castro, Jose; Mauro, Diego; Pásztor, Árpád Nano Letters, Vol. 18, Issue 11 https://doi.org/10.1021/acs.nanolett.8b01978	journal	October 2018
Vertical MoS ₂ Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV Xu, Renjing; Jang, Houk; Lee, Min-Hyun Nano Letters, Vol. 19, Issue 4 https://doi.org/10.1021/acs.nanolett.8b05140	journal	March 2019
Periodic Modulation of the Doping Level in Striped MoS ₂ Superstructures Zhou, Xiebo; Shi, Jianping; Qi, Yue ACS Nano, Vol. 10, Issue 3 https://doi.org/10.1021/acsnano.5b07545	journal	February 2016
Mechanism of Gold-Assisted Exfoliation of Centimeter-Sized Transition-Metal Dichalcogenide Monolayers Velický, Matěj; Donnelly, Gavin E.; Hendren, William R. ACS Nano, Vol. 12, Issue 10 https://doi.org/10.1021/acsnano.8b06101	journal	September 2018
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide Zhou, Wu; Zou, Xiaolong; Najmaei, Sina Nano Letters, Vol. 13, Issue 6, p. 2615-2622 https://doi.org/10.1021/nl4007479	journal	May 2013
Direct Imaging of Band Profile in Single Layer MoS ₂ on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl501133c	journal	April 2014
Structure and Electronic Properties of In Situ Synthesized Single-Layer MoS ₂ on a Gold Surface Sørensen, Signe G.; Füchtbauer, Henrik G.; Tuxen, Anders K. ACS Nano, Vol. 8, Issue 7 https://doi.org/10.1021/nn502812n	journal	June 2014
The signature of chemical valence in the electrical conduction through a single-atom contact Scheer, Elke; Agraït, Nicolás; Cuevas, Juan Carlos Nature, Vol. 394, Issue 6689 https://doi.org/10.1038/28112	journal	July 1998
Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition Liu, Zheng; Amani, Matin; Najmaei, Sina Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms6246	journal	November 2014
Exploring atomic defects in molybdenum disulphide monolayers Hong, Jinhua; Hu, Zhixin; Probert, Matt Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7293	journal	February 2015
Determination of band alignment in the single-layer MoS2/WSe2 heterojunction Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms8666	journal	July 2015
Memory leads the way to better computing Wong, H. -S. Philip; Salahuddin, Sayeef Nature Nanotechnology, Vol. 10, Issue 3 https://doi.org/10.1038/nnano.2015.29	journal	March 2015
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2 Sangwan, Vinod K.; Jariwala, Deep; Kim, In Soo Nature Nanotechnology, Vol. 10, Issue 5 https://doi.org/10.1038/nnano.2015.56	journal	April 2015
Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy Song, Seung Hyun; Joo, Min-Kyu; Neumann, Michael Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-02297-3	journal	December 2017
Zero-static power radio-frequency switches based on MoS2 atomristors Kim, Myungsoo; Ge, Ruijing; Wu, Xiaohan Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-04934-x	journal	June 2018
Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories Zhang, Feng; Zhang, Huairuo; Krylyuk, Sergiy Nature Materials, Vol. 18, Issue 1 https://doi.org/10.1038/s41563-018-0234-y	journal	December 2018
Graphene and two-dimensional materials for silicon technology Akinwande, Deji; Huyghebaert, Cedric; Wang, Ching-Hua Nature, Vol. 573, Issue 7775 https://doi.org/10.1038/s41586-019-1573-9	journal	September 2019
Robust memristors based on layered two-dimensional materials Wang, Miao; Cai, Songhua; Pan, Chen Nature Electronics, Vol. 1, Issue 2 https://doi.org/10.1038/s41928-018-0021-4	journal	February 2018
The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy Vancsó, Péter; Magda, Gábor Zsolt; Pető, János Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep29726	journal	July 2016
Field‐induced surface modification on the atomic scale by scanning tunneling microscopy Huang, Jin‐Lin; Sung, Yung‐Eun; Lieber, Charles M. Applied Physics Letters, Vol. 61, Issue 13 https://doi.org/10.1063/1.107537	journal	September 1992
Electrochemical metallization memories—fundamentals, applications, prospects Valov, Ilia; Waser, Rainer; Jameson, John R. Nanotechnology, Vol. 22, Issue 25 https://doi.org/10.1088/0957-4484/22/25/254003	journal	May 2011
Theoretical characterisation of point defects on a MoS ₂ monolayer by scanning tunnelling microscopy González, C.; Biel, B.; Dappe, Y. J. Nanotechnology, Vol. 27, Issue 10 https://doi.org/10.1088/0957-4484/27/10/105702	journal	February 2016
Atomic-scale defects and electronic properties of a transferred synthesized MoS ₂ monolayer Delač Marion, Ida; Čapeta, Davor; Pielić, Borna Nanotechnology, Vol. 29, Issue 30 https://doi.org/10.1088/1361-6528/aac27d	journal	May 2018
Self-Consistent Equations Including Exchange and Correlation Effects Kohn, W.; Sham, L. J. Physical Review, Vol. 140, Issue 4A, p. A1133-A1138 https://doi.org/10.1103/PhysRev.140.A1133	journal	November 1965
Theory of the scanning tunneling microscope Tersoff, J.; Hamann, D. R. Physical Review B, Vol. 31, Issue 2 https://doi.org/10.1103/PhysRevB.31.805	journal	January 1985
Tip-induced local strain on Mo S 2 / graphite detected by inelastic electron tunneling spectroscopy Ko, Wonhee; Hus, Saban M.; Li, Xufan Physical Review B, Vol. 97, Issue 12 https://doi.org/10.1103/PhysRevB.97.125401	journal	March 2018
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Phase-Change and Redox-Based Resistive Switching Memories Wouters, Dirk J.; Waser, Rainer; Wuttig, Matthias Proceedings of the IEEE, Vol. 103, Issue 8 https://doi.org/10.1109/JPROC.2015.2433311	journal	August 2015
Memristor-The missing circuit element Chua, L. IEEE Transactions on Circuit Theory, Vol. 18, Issue 5 https://doi.org/10.1109/TCT.1971.1083337	journal	January 1971

Similar Records

Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer

Journal Article · Mon Jan 15 19:00:00 EST 2024 · ACS Nano · OSTI ID:2283864

Carbon-based volatile and non-volatile memristors

Patent · Tue Jul 19 00:00:00 EDT 2022 · OSTI ID:1924917

A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon

Journal Article · Sun Dec 27 19:00:00 EST 2020 · Advanced Materials · OSTI ID:1760114

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY

Observation of single-defect memristor in an MoS2 atomic sheet

Citation Formats

References (36)

Similar Records

Related Subjects