Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer

Yang, Sung Jin; Liang, Liangbo; Lee, Yoonseok; Gu, Yuqian; Fatheema, Jameela; Kutagulla, Shanmukh; Kim, Dahyeon; Kim, Myungsoo; Kim, Sungjun; Akinwande, Deji

doi:10.1021/acsnano.3c10068

Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer

Journal Article · Mon Jan 15 23:00:00 EST 2024 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.3c10068· OSTI ID:2283864

^[1]; ^[2]; Lee, Yoonseok ^[3]; ^[1]; Fatheema, Jameela ^[1]; ^[1]; Kim, Dahyeon ^[4]; ^[4]; ^[3]; ^[1]

Univ. of Texas, Austin, TX (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Dongguk Univ., Seoul (Korea, Republic of)
Ulsan National Institute of Science and Technology (UNIST), Ulsan (Korea, Republic of)

Recently, we demonstrated the nonvolatile resistive switching effects of metal–insulator–metal (MIM) atomristor structures based on two-dimensional (2D) monolayers. However, there are many remaining combinations between 2D monolayers and metal electrodes; hence, there is a need to further explore 2D resistance switching devices from material selections to future perspectives. This study investigated the volatile and nonvolatile switching coexistence of monolayer hexagonal boron nitride (h-BN) atomristors using top and bottom silver (Ag) metal electrodes. Utilizing an h-BN monolayer and Ag electrodes, we found that the transition between volatile and nonvolatile switching is attributed to the thickness/stiffness of chain-like conductive bridges between h-BN and Ag surfaces based on the current compliance and atomristor area. Computations indicate a “weak” bridge is responsible for volatile switching, while a “strong” bridge is formed for nonvolatile switching. Further, the current compliance determines the number of Ag atoms that undergo dissociation at the electrode, while the atomristor area determines the degree of electric field localization that forms more stable conductive bridges. The findings of this study suggest that the h-BN atomristor using Ag electrodes shows promise as a potential solution to integrate both volatile neurons and nonvolatile synapses in a single neuromorphic crossbar array structure through electrical and dimensional designs.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), High Energy Physics (HEP); USDOE Office of Science (SC), Nuclear Physics (NP); USDOE Office of Science (SC), Fusion Energy Sciences (FES); US Department of the Navy, Office of Naval Research (ONR); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 2283864

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 4 Vol. 18; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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