Carbon-based volatile and non-volatile memristors

Jarillo-Herrero, Pablo; Ma, Qiong; Gedik, Nuh; Xu, Suyang; Zheng, Zhiren

Carbon-based volatile and non-volatile memristors

Patent · Tue Jul 19 04:00:00 EDT 2022

OSTI ID:1924917

Jarillo-Herrero, Pablo; Ma, Qiong; Gedik, Nuh; Xu, Suyang; Zheng, Zhiren

An ultrathin, carbon-based memristor with a moiré superlattice potential shows prominent ferroelectric resistance switching. The memristor includes a bilayer material, such as Bernal-stacked bilayer graphene, encapsulated between two layers of a layered material, such as hexagonal boron nitride. At least one of the encapsulating layers is rotationally aligned with the bilayer to create the moiré superlattice potential. The memristor exhibits ultrafast and robust resistance switching between multiple resistance states at high temperatures. The memristor, which may be volatile or nonvolatile, may be suitable for neuromorphic computing.

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Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: USDOE; US Air Force Office of Scientific Research (AFOSR)

DOE Contract Number:: AC02-07CH11358; SC0001819; SC0019300

Assignee:: Massachusetts Institute of Technology (Cambridge, MA)

Patent Number(s):: 11,393,976

Application Number:: 17/094,141

OSTI ID:: 1924917

Country of Publication:: United States

Language:: English

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