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Reliability Improvement and Effective Switching Layer Model of Thin-Film MoS2 Memristors

Journal Article · · Advanced Functional Materials
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  1. University of Texas, Austin, TX (United States)
  2. Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
  3. Intel Corporation, Hillsboro, OR (United States)
  4. Northern Arizona University, Flagstaff, AZ (United States)
+ Show Author Affiliations

2D memristors have demonstrated attractive resistive switching characteristics recently but also suffer from the reliability issue, which limits practical applications. Previous efforts on 2D memristors have primarily focused on exploring new material systems, while damage from the metallization step remains a practical concern for the reliability of 2D memristors. Here, the impact of metallization conditions and the thickness of MoS2 films on the reliability and other device metrics of MoS2-based memristors is carefully studied. The statistical electrical measurements show that the reliability can be improved to 92% for yield and improved by ≈16× for average DC cycling endurance in the devices by reducing the top electrode (TE) deposition rate and increasing the thickness of MoS2 films. Intriguing convergence of switching voltages and resistance ratio is revealed by the statistical analysis of experimental switching cycles. An “effective switching layer” model compatible with both monolayer and few-layer MoS2, is proposed to understand the reliability improvement related to the optimization of fabrication configuration and the convergence of switching metrics. In conclusion, the Monte Carlo simulations help illustrate the underlying physics of endurance failure associated with cluster formation and provide additional insight into endurance improvement with device fabrication optimization.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
Grant/Contract Number:
89233218CNA000001
OSTI ID:
2007364
Alternate ID(s):
OSTI ID: 1983546
Report Number(s):
LA-UR--22-32660
Journal Information:
Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 15 Vol. 34; ISSN 1616-301X
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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Figures / Tables (6)

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Related Subjects

36 MATERIALS SCIENCE
Material Science
defect engineering
molybdenum disulfide
resistive switching
two-dimensional materials