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Title: Defect reduction in seeded aluminum nitride crystal growth

Patent ·
OSTI ID:1823990
; ; ; ; ;

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Research Organization:
Crystal IS, Inc., Green Island, NY (United States); National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
70NANB4H3051; FC26-08NT01578
Assignee:
Crystal IS, Inc. (Green Island, NY)
Patent Number(s):
11,015,263
Application Number:
16/505,840
OSTI ID:
1823990
Resource Relation:
Patent File Date: 07/09/2019
Country of Publication:
United States
Language:
English

References (10)

Defect reduction in seeded aluminum nitride crystal growth patent September 2014
Defect reduction in seeded aluminum nitride crystal growth patent June 2017
Defect Reduction in Seeded Aluminum Nitride Crystal Growth patent-application December 2017
Defect Reduction and Seeded Aluminum Nitride Crystal Growth patent-application April 2019
Defect reduction in seeded aluminum nitride crystal growth patent September 2017
Defect reduction in seeded aluminum nitride crystal growth patent December 2012
Defect reduction in seeded aluminum nitride crystal growth patent November 2018
Thick pseudomorphic nitride epitaxial layers patent December 2011
Defect reduction in seeded aluminum nitride crystal growth patent April 2017
NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS patent-application November 2009

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