skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Defect reduction in seeded aluminum nitride crystal growth

Abstract

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Inventors:
; ; ; ; ;
Publication Date:
Research Org.:
CRYSTAL IS, INC., Green Island, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1399250
Patent Number(s):
9,771,666
Application Number:
14/684,754
Assignee:
CRYSTAL IS, INC. NETL
DOE Contract Number:  
FC26-08NT01578
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Apr 13
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A, Rao, Shailaja P., and Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth. United States: N. p., 2017. Web.
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A, Rao, Shailaja P., & Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth. United States.
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A, Rao, Shailaja P., and Gibb, Shawn Robert. Tue . "Defect reduction in seeded aluminum nitride crystal growth". United States. https://www.osti.gov/servlets/purl/1399250.
@article{osti_1399250,
title = {Defect reduction in seeded aluminum nitride crystal growth},
author = {Bondokov, Robert T. and Schowalter, Leo J. and Morgan, Kenneth and Slack, Glen A and Rao, Shailaja P. and Gibb, Shawn Robert},
abstractNote = {Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {9}
}

Patent:

Save / Share: