Defect reduction in seeded aluminum nitride crystal growth

Patent · Tue Aug 27 00:00:00 EDT 2019

OSTI ID:1576373

Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A.; Rao, Shailaja P.; Gibb, Shawn Robert

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

• Research Organization: Crystal IS Inc., Green Island, NY (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: FC26-08NT01578
• Assignee: Crystal IS, Inc. (Green Island, NY)
• Patent Number(s): 10,392,722
• OSTI ID: 1576373
• Resource Relation: Patent File Date: 2017 Aug 24
• Country of Publication: United States
• Language: English