Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Power Electronics Devices based on Al-rich Aluminum Gallium Nitride.

Conference ·
OSTI ID:1806875
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1806875
Report Number(s):
SAND2018-11013C; 668558
Country of Publication:
United States
Language:
English

Similar Records

Ultra-Wide-Bandgap Power Electronic Devices Based on Aluminum Gallium Nitride.
Conference · Sat Apr 01 00:00:00 EDT 2017 · OSTI ID:1456495

Reliability Considerations for Al-rich Aluminum Gallium Nitride Power Switching Transistors.
Conference · Tue Oct 01 00:00:00 EDT 2019 · OSTI ID:1643067

Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Electronic Devices.
Conference · Wed Nov 30 23:00:00 EST 2016 · OSTI ID:1414571

Related Subjects