Ultra-Wide-Bandgap Power Electronic Devices Based on Aluminum Gallium Nitride.
Conference
·
OSTI ID:1456495
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1456495
- Report Number(s):
- SAND2017-3592C; 652281
- Resource Relation:
- Conference: Proposed for presentation at the Government Microcircuit Applications and Critical Technology Conference held March 20-23, 2017 in reno, NV, United Stated.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Electronic Devices.
Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices.
Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices (invited).
Conference
·
Thu Dec 01 00:00:00 EST 2016
·
OSTI ID:1456495
+2 more
Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices.
Conference
·
Sun Oct 01 00:00:00 EDT 2017
·
OSTI ID:1456495
+13 more
Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices (invited).
Conference
·
Wed Nov 01 00:00:00 EDT 2017
·
OSTI ID:1456495
+13 more