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Methods for fabricating thin film III-V compound solar cell

Patent ·
OSTI ID:1805520
The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
Research Organization:
Microlink Devices, Inc., Niles, IL (United States)
Sponsoring Organization:
USDOE
Assignee:
Microlink Devices, Inc. (Niles, IL)
Patent Number(s):
10,923,617
Application Number:
13/165,318
OSTI ID:
1805520
Country of Publication:
United States
Language:
English

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